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Том 49 (2013), Номер 1, стр. 1-3

The Impact of the Discreteness of Low-fluence Ion Beam Processing on the Spatial Architecture of GaN Nanostructures Fabricated by Surface Charge Lithography

Tiginyanu I.M., Volciuc O., Stevens-Kalceff M.A., Popa V., Gutowski J., Wille S., Adelung R., Föll H.

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